This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3

Abstract

We report on experiments which unequivocal identify the chemical nature of opti-cal transitions related to As (2.58 eV), Ge (3.398 eV) and Se (1.49 eV) found in the pho-toluminescence (PL) spectra of GaN. For this purpose epitaxial GaN layers were doped by ion implantation (60 keV, 3x10¹² cm^-2 ) with the radioactive isotopes ⁷¹As and ⁷²Se. The isotope ⁷¹As (half-life 64.28 h) decays first into ⁷¹Ge (11.43 d), which finally trans-mutes into stable ⁷¹Ga. The isotope ⁷²Se decays via ⁷²As (26 h) into stable ⁷²Ge. These chemical transmutations were monitored with photoluminescence spectroscopy (PL). The half-lives resulting from exponential fits on our PL data are in excellent agreement with the half-lives of the isotopes. Our experiments clearly show that in each case the lumin-escence center involves exactly one As, Ge or Se atom. In addition to this, the results imply that no optically active Ga_N antisite exists.

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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W12.9 (2000).

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