MIJ-NSR Vol. 5S1, Art. W12.8, Takao Someya et al.

Emission at 247 nm from GaN Quantum Wells Grown by MOCVD

Takao Someya, Katsuyuki Hoshino, Janet C. Harris, Koichi Tachibana, Satoshi Kako, Yasuhiko Arakawa
RCASTIIS, Univ. of Tokyo

This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3

Abstract

Photoluminescence (PL) spectra were measured at room temperature for GaN quantum wells (QWs) with Al_0.8Ga_0.2N barriers, which were grown by atmospheric-pressure metal organic chemical vapor deposition (MOCVD). The thickness of the GaN QW layers was systematically varied from one monolayer to four monolayers. We clearly observed a PL peak at a wavelength as short as 247 nm (5.03 eV) from one monolayer-thick QWs. The effective confinement energy is as large as 1.63 eV.

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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W12.8 (2000).

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