This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3

Abstract

Uniaxial wurtzite group-III nitride heterostructures are subject to large polarization effects with significant consequences for device physics in optoelectronic and transport device applications. A central aspect for the proper implementation is the experimental quantification of polarization charges and associated fields. In modulated reflection spectroscopy of thin films and heterostructures of AlGaInN we observe pronounced Franz-Keldysh oscillations that allow direct and accurate readings of the field strength induced by polarization dipoles at the heterointerfaces. In piezoelectric GaInN/GaN quantum wells this dipole is found to induce an asymmetry in barrier heights with a re-spective splitting of interband transitions. This splitting energy appears to reflect in the transitions of spontaneous and stimulated luminescence in the well. From these experi-ments the polarization dipole is identified as controllable type-II staggered band offset between adjacent barrier layers which can extend the flexibility in AlGaInN bandstruc-ture design. The derived field values can serve as important input parameters in the further interpretation of the entire system.

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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W12.4 (2000).

last updated Wednesday, May 17, 2000 5:03:01 PM.
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