last updated Wednesday, May 17, 2000 4:58:31 PM.
© 2000 The Materials Research Society
Nezih Pala, R. Gaska, M. Shur
Rensselaer Polytechnic Institute
J. W. Yang, M. A. Khan
University of South Carolina
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
The low-frequency noise in GaN-based Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors (MOS-HFETs) and HFETs on sapphire and n-SiC substrates were studied. Hooge parameter at zero gate bias was calculated about 8 x 10-4 for both types of the devices. The AlGaN/GaN MOS-HFETs exhibited extremely low gate leakage current and much lower noise at both positive and negative gate biases. These features demonstrate the high quality of the SiO2/AlGaN heterointerface and feasibility of this technology for high-power microwave transmitter and high-power, high-temperature switches.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W11.9 (2000).
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