last updated Wednesday, May 17, 2000 5:02:38 PM.
© 2000 The Materials Research Society
Alexander Y. Polyakov, Nikolai B. Smirnov, Anatoliy V. Govorkov
Institute of Rare Metals
Alexander S. Usikov, Natalie M. Shmidt, Boris V. Pushnyi, Denis V. Tsvetkov, Sergey I. Stepanov
A.F. Ioffe Physiko-Technical Institute RAS
Vladimir A. Dmitriev
TDI., Inc.
Mikhail G. Mil'vidskii, Vladimir F. Pavlov
Institute of Rare Metals
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
Deep levels studies on a set of n-GaN films grown by MOCVD and HVPE reveal the presence of electron traps with levels near Ec-0.25 eV, Ec-0.55 eV, Ec-0.8 eV, Ec-1 eV, hole traps with levels near Ev+0.9 eV and a band of relatively shallow states in the lower half of the bandgap. The total density of these latter states was estimated to be some 1016 cm-3 and they were tentatively associated with dislocations in GaN based on their high concentration and band-like character. None of the electron or hole traps could be unambiguously related with strong changes of diffusion lengths of minority carriers in various samples. It is proposed that such changes occur due to different surface recombination velocities. An important role of Ec-0.55 eV traps in persistent photoconductivity phenomena in n-GaN has been demonstrated.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W11.81 (2000).
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