This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3

Abstract

The deep level spectra in both p⁺-n homojunction and n-type Schottky GaN diodes are studied by deep level transient spectroscopy (DLTS) in order to compare the role of the junction configuration on the defects found within the n-GaN layer. Both majority and minority carrier DLTS measurements are performed on the diodes allowing the observation of both electron and hole traps in n-GaN. An electron level at E_c-E_t=0.58 and 0.62 V is observed in the p⁺-n and Schottky diodes, respectively, with a concentration of ~3-4x10¹⁴ cm^-3 and a capture cross section of ~1-5x10^-15 cm². The similar Arrhenius behavior indicates that both emissions are related to the same defect. The shift in activation energy is correlated to the electric field enhanced-emission in the p⁺ -n diode, where the junction barrier is much larger. The p⁺-n diode configuration allows the observation of a hole trap at E_t-E_v=0.87 eV in the n-GaN which is very likely related to the yellow luminescence band.

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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W11.80 (2000).

last updated Wednesday, May 17, 2000 5:02:32 PM.
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