last updated Wednesday, May 17, 2000 4:58:26 PM.
© 2000 The Materials Research Society
A. Michel, D. Hanser, R. F. Davis
North Carolina State University
D. Qiao, S. S. Lau, L. S. Yu, W. Sun, P. Asbeck
University of California, San Diego
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
Acceptor (Mg)-doped AlGaN/GaN heterostructures were grown via MOVPE and compared to similarly doped GaN standard films grown in the same reactor. Chemical analysis of the films, via secondary ion mass spectrometry (SIMS), revealed comparable Mg concentrations of ~2x1019 atoms/cm3 in all films. The Mg-doped GaN standard sample had a sheet conductance of 7-mS compared to a sheet conductance of 20- mS for an AlGaN/GaN heterostructure. The sheet conductance of the AlGaN/GaN heterostructures was higher due to piezoelectric acceptor doping and modulation doping effects in addition to conventional Mg acceptor doping.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W11.8 (2000).
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