last updated Wednesday, May 17, 2000 5:02:21 PM.
© 2000 The Materials Research Society
Bo Liu, Mikko H. Ahonen, Paul H. Holloway
University of Florida
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
A new ohmic contact scheme for gallium nitride is presented. The use of Nitride-forming metal Over Gallide-forming metal, "NOG", can modify the thermodynamic activity of N and Ga near the interface. This in turn can modify the near-surface point defect concentrations, particularly the vacancies of Ga and N. The principle of this contact scheme was shown to be consistent with results from Ni/Au, Ni/Zn-Au, Ta/Ti, and Ni/Mg/Ni/Si contacts. In the present study, the "NOG" scheme was used to design Ni/Ti/Au and Ni/Al/Au metallization, and addition of Ti and Al nitride-forming metals to the Ni gallide-forming metal led to lower but still high contact resistance. Ti was shown to be better than Al as the nitride-forming metal based on the decrease of resistance in as deposited contacts. Compared to Ni/Au, four times more current was measured in Ni/Ti/Au contacts to p-GaN after anneal at 300 °C for 5min. However the addition of the Ti nitride-forming metal led to lower stabilit y at 500 °C .
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W11.78 (2000).
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