last updated Sunday, May 28, 2000 3:29:45 PM.
© 2000 The Materials Research Society
Fouad Karouta, Bart Jacobs
Eindhoven University of Technology
Ingrid Moerman, Koen Jacobs
INTEC - Ghent - Belgium
Jan Weyher, Sylvester Porowski
Unipress - Poland
Rachel Crane, Paul Hageman
KU-Nijmegen - Netherlands
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
A highly chemical reactive ion etching process has been developed for MOVPE-grown GaN on sapphire. The key element for the enhancement of the chemical property during etching is the use of a fluorine containing gas in a chlorine based chemistry. In the perspective of using GaN substrates for homo-epitaxy of high quality GaN/AlGaN structures we have used the above described RIE process to smoothen Ga-polar GaN substrates. The RMS value, measured by AFM, went from 20 Å (after mechanical polishing) down to 4 Å after 6 minutes of RIE. Etching N-polar GaN resulted in a higher etch rate than Ga-polar materials (165 vs. 110 nm/min) but the resulting surface was quite rough and suffers from instability problems. Heat treatment and HCl dip showed a partial recovery of Schottky characteristics after RIE.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W11.76 (2000).
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