last updated Wednesday, May 17, 2000 5:02:05 PM.
© 2000 The Materials Research Society
Pierre Ruterana, Gerard Nouet Nouet
ISMRA
Thomas Kehagias, Philomela Komninou, Theodoros Karakostas
Aristotle University
Marie Antoinette di Forte Poisson, Frederik Huet
Thomson-CSF
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
When the stoichiometric TiN was deposited directly on GaN, we obtained columnar TiN grains of 5-20 nm section which cross the whole film thickness and are rotated mostly around the [111] axis. The conventional epitaxial relationship is obtained and no amorphous patches are observed at the interface. The deposition of TiN on Si doped GaN layers lead to the formation of an ohmic contact, whereas we obtain a rectifying contact on p type layers.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W11.75 (2000).
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