last updated Wednesday, May 17, 2000 5:02:00 PM.
© 2000 The Materials Research Society
Chang-Hee Hong, Ki Soo Kim, Won-Hee Lee, Chi Sun Kim, Ok Hwan Cha, Gye Mo Yang, Eun-Kyung Suh, Kee Young Lim, Hyung Jae Lee
Chonbuk National University
Hyung Koun Cho, Jeong Yong Lee
KAIST
Jae Myung Seo
Chonbuk National University
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
Thin layers of InGaN were grown by metalorganic chemical vapor deposition and characterized with atomic force microscopy and high-resolution transmission electron microscopy. InGaN deposited on GaN exhibits a Stranski-Krastanov growth mode, including 2D wetting layer and 3D self-assembled quantum dots. Besides, we observed that the formed InGaN nano-scale dots have a trapezoidal shape with a {1-102} facet with respect to (0002) surface. Visible spectral range from UV to green was easily obtained by changing InGaN quantum well thickness up to 2.3 nm.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W11.74 (2000).
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