last updated Wednesday, May 17, 2000 5:01:39 PM.
© 2000 The Materials Research Society
Qiang Zhao, M. Lukitsch, J. Xu, G. Auner, R. Niak, P-K. Kuo
Wayne State University
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
Excimer laser ablation rates of Si (111) and AlN films grown on Si (111) and r-plane sapphire substrates were determined. Linear dependence of ablation rate of Si (111) substrate, sapphire and AlN thin films were observed. Excimer laser micromachining of the AlN thin films on silicon (111) and SiC substrates were micromachined to fabricate a waveguide structure and a pixilated structure. This technique resulted in clean precise machining of AlN with high aspect ratios and straight walls.
Full text of this article is available.
For information about using Adobe Acrobat files, click here .
Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W11.69 (2000).
|
|
|
Reference List Building For information on building reference lists, see About the MIJ-NSR Reference List Builder |