/square in n-GaN
and ~1010/square in p-GaN. The mechanism for the implant isolation was damage-related
trap formation for all of the ions investigated, and there was no evidence of
chemically induced isolation.
Gerard Dang, Xian An Cao, Fan Ren, Stephen J. Pearton
University of Florida
J. Han, A. G. Baca, R. J. Shul
Sandia National Laboratories
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
Different ions (Ti+, O+, Fe+, Cr+ ) were implanted at mult iple energies into GaN
field effect transistor structures (n and p-type). The implantation was found to create
deep states with energy levels in the range EC --0.20 to 0.49 eV in n-GaN and at EV +0.44
eV in p-GaN after annealing at 450-650 °C . The sheet resistance of the GaN was at a
maximum after annealing at these temperatures, reaching values of ~4x1012/square in n-GaN
and ~1010/square in p-GaN. The mechanism for the implant isolation was damage-related
trap formation for all of the ions investigated, and there was no evidence of
chemically induced isolation.
Full text of this article is available.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W11.68 (2000).
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