cm-2 .
A.P. Zhang, G.T. Dang, X.A. Cao, H. Cho, F. Ren
University of Florida
J. Han
Sandia National Laboratories
J.-I. Chyi, C.-M. Lee, T.-E. Nee, G.-C. Chi, C.-C. Chuo
National Central University
S.N.G. Chu
Bell Laboratories, Lucent Technologies
R.G. Wilson
Consultant, Stevenson Ranch CA
S. J. Pearton
University of Florida
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
Mesa and planar geometry GaN Schottky rectifiers were fabricated on 3-12xm
thick epitaxial layers. In planar diodes utilizing resistive GaN, a reverse breakdown
voltage of 3.1 kV was achieved in structures containing p-guard rings and employing
extension of the Schottky contact edge over an oxide layer. In devices without edge
termination, the reverse breakdown voltage was 2.3 kV. Mesa diodes fabricated on
conducting GaN had breakdown voltages in the range 200-400 V, with on-state
resistances as low as 6mcm-2 .
Full text of this article is available.
For information about using Adobe Acrobat files, click here .
Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W11.67 (2000).
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