last updated Wednesday, May 17, 2000 5:01:22 PM.
© 2000 The Materials Research Society
Anping Zhang, Gerard Dang, F. Ren, X.A. CAo, H. Cho, E.S. Lambers, S.J. Pearton
University of Florida
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
The effects of dc chuck self-bias and high density source power (which predominantly control ion energy and ion flux, respectively) on the electrical properties of n-GaN Schottky diodes exposed to Inductively Coupled Plasma of Cl2/Ar were examined. Both parameters were found to influence the diode performance, by reducing the reverse breakdown voltage and Schottky barrier height. All plasma conditions were found to produce a nitrogen-deficient surface, with a typical depth of the non-stoichiometry being ~500 Å. Post-etch annealing was found to partially restore the diode characteristics.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W11.66 (2000).
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