last updated Wednesday, May 17, 2000 5:01:11 PM.
© 2000 The Materials Research Society
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
In this paper we have reported the observation of visible photoluminescence (PL) and cathodoluminescence (CL) of Pr implanted in GaN. The implanted samples were given isochronal thermal annealing treatments at a temperature of 1100 °C in NH3, N2, Ar2, and in forming gas N2 +H2, at atmospheric pressure to recover implantation damages and activate the rare earth ions. The sharp characteristic emission lines corresponding to Pr3+ intra-4fn -shell transitions are resolved in the spectral range from 350 nm to 1150 nm, and observed over the temperature range of 12 K-335 K. The PL and CL decay kinetics measurement was performed for 3P1, 3P0 and 1D2 levels.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W11.64 (2000).
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