last updated Wednesday, May 17, 2000 5:01:05 PM.
© 2000 The Materials Research Society
Mark Eddy Overberg, C. R. Abernathy, S. J. Pearton
University of Florida
R. G. Wilson
Consultant, Stevenson Ranch CA
J. M. Zavada
U.S. Army European Research Office
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
The surface morphology and the room temperature 1.54 µm photoluminescence (PL) intensity from GaN:Er grown by gas source molecular beam epitaxy have been investigated as a function of C concentration as introduced by CBr4. Similar to previous results with increasing Er level, increasing the C concentration initially improved the surface smoothness as measured by atomic force microscopy (AFM) and scanning electron microscopy (SEM), with RMS roughness improving by a factor of seven over undoped GaN. The PL also improved dramatically. However, the highest amounts of C investigated produced a decrease in the PL as well as a roughening of the film surface. These effects indicate that the GaN:Er had reached its C solubility limit, producing an increased amount of defect induced nonradiative recombination.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W11.62 (2000).
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