Michael Wraback, H. Shen
U.S. Army Research Laboratory
C. J. Eiting, J. C. Carrano, R. D. Dupuis
University of Texas at Austin
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
The pump-probe technique has been used to perform room temperature studies of the photoinduced changes in the reflectivity DR associated with exciton and carrier dynamics in GaN prepared by lateral epitaxial overgrowth. For resonant excitation of cold excitons, the DR decay possesses a 720 ps component attributed to the free exciton lifetime in this high quality material. For electrons with small excess energy (< 50 meV), the strong increase in the DR decay rate with decreasing excitation density suggests that screening of the Coulomb interaction may play an important role in the processes of carrier relaxation and exciton formation. The faster decay times at a given carrier density observed for hot (> 100 meV) electron relaxation are attributed to electron-hole scattering in conjunction with the screened electron-LO phonon interaction.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W11.55 (2000).
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