Joachim Wagner, Arun Ramakrishnan, Harald Obloh, Michael Kunzer, Klaus Kšhler
Fraunhofer Institut für Angewandte Festkörperphysik
B Johs
J.A. Woollam Co., Inc., Lincoln, Nebraska
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
Spectroscopic ellipsometry (SE) has been used for the characterization of
AlGaN/GaN and InGaN/GaN heterostructures. The resulting pseudodielectric function
spectra were analyzed using a multilayer approach, describing the dielectric functions of
the individual layers by a parametric oscillator model. From this analysis, the dielectric
function spectra of GaN, AlxGa1-xN (x
0.16), and In0.13Ga0.87N were deduced. Further,
the dependence of the AlxGa1-xN band gap energy on the Al mole fraction was derived
and compared with photoluminescence data recorded on the same material. The SE band
gap data are compatible with a bowing parameter close to 1 eV for the composition de-pendence
of the AlxGa1-xN gap energy. Finally, the parametric dielectric functions have
been used to model the pseudodielectric function spectrum of a complete
GaN/AlGaN/InGaN LED structure.
Full text of this article is available.
For information about using Adobe Acrobat files, click here .
Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W11.54 (2000).
|
|
|
Reference List Building For information on building reference lists, see About the MIJ-NSR Reference List Builder |
