last updated Wednesday, May 17, 2000 5:00:32 PM.
© 2000 The Materials Research Society
Ivan Tiginyanu, I. V. Kravetsky
Technical University of Moldova
D. Pavlidis, A. Eisenbach, R. Hildebrandt
University of Michigan
G. Marowsky
Laser Labrotorium Gottingen
H. L. Hartnagel
Technische Universitat Darmstadt
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
Optical second and third harmonic generation measurements were carried out on GaN layers grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates. The measured d33 is 33 times the d11 of quartz. The angular dependence of second-harmonic intensity as well as the measured ratios d33/d15 = -2.02 and d33/d31 = -2.03 confirm the wurzite structure of the studied GaN layers with the optical c-axis oriented perpendicular to the sample surface. Fine oscillations were observed in the measured second and third harmonic angular dependencies. A simple model based on the interference of the fundamental beam in the sample was used to explain these oscillations.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W11.52 (2000).
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