last updated Wednesday, May 17, 2000 4:58:20 PM.
© 2000 The Materials Research Society
W. P. Li, R. Zhang, J. Yin, X. H. Liu, Y. G. Zhou, B. Shen, P. Chen, Z. Z. Chen, Y. Shi, R. L. Jiang, Z. G. Liu, Y. D. Zheng, Z. C. Huang
Nanjing University
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
GaN-based metal-ferroelectric-semiconductor (MFS) structure has been fabricated by using ferroelectric Pb(Zr0.53Ti0.47)O3 (PZT) instead of conventional oxides as gate insulators. The GaN and PZT films in the MFS structures have been characterized by various methods such as photoluminescence (PL), wide-angle X-ray diffraction (XRD) and high-resolution X-ray diffraction (HRXRD). The Electric properties of GaN MFS structure with different oxide thickness have been characterized by high-frequency C-V measurement. When the PZT films are as thick as 1 mm, the GaN active layers can approach inversion under the bias of 15V, which can not be observed in the traditional GaN MOS structures. When the PZT films are about 100 nm, the MFS structures can approach inversion just under 5V. All the marked improvements of C-V behaviors in GaN MFS structures are mainly attributed to the high dielectric constant and large polarization of the ferroelectric gate oxide.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W11.5 (2000).
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