last updated Wednesday, May 17, 2000 5:00:17 PM.
© 2000 The Materials Research Society
El Hadj Dogheche
Université de Valenciennes
Brahim Belgacem, Denis Remiens
LAMAC
Pierre Ruterana
ISMRA
Franck OMNES
CRHEA-CNRS
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
An optical characterization technique is proposed for GaN based compounds deposited on sapphire. In AlGaN films grown by MOCVD, the film optical behavior and the substrate to layer interface are qualified from the measured optical data. The experimental and theoretical approach used for this purpose is described in detail. The results clearly show bending effects at the interface which may be related to structural defects; a good agreement with transmission electronic microscopy analysis is obtained.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W11.49 (2000).
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