last updated Wednesday, May 17, 2000 5:00:06 PM.
© 2000 The Materials Research Society
A. J. Ptak, V. A. Stoica, L. J. Holbert, M. Moldovan, Thomas H. Myers
West Virginia University
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
Photoconductance decay and spectral photoconductance measurements were made on a set of ten undoped layers of GaN grown by rf-plasma MBE. The layers, also characterized by Hall, photoluminescence and reflectance measurements, represented a wide variety in electrical and optical properties, and several were grown under atomic hydrogen. Spectral photoconductance indicated transitions at 1.0-1.1, 1.92, 2.15, 3.08 and 3.2-3.4 eV. All layers exhibited persistent photoconductivity to some degree. In contrast with previous reports, a clear correlation was not observed between persistent photoconductivity and yellow luminescence or, indeed, with any measurement made. Analysis of photoconductance decay indicates that more than one type of persistent photoconductivity may be present.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W11.45 (2000).
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