last updated Wednesday, May 17, 2000 5:00:01 PM.
© 2000 The Materials Research Society
Carsten Ronning, Hans C. Hofsaess
University of Goettingen
Arno Stoetzler, Manfred Deicher
University of Konstanz
Eric P. Carlson, Philip J. Hartlieb, Thomas Gehrke, Pradeep Rajagopal, Robert F Davis
North Carolina State University
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
Single crystalline (0001) gallium nitride layers, capped with a thin epitaxial aluminum nitride layer, were implanted with magnesium and subsequently annealed in vacuum to 1150-1300 °C for 10-60 minutes. Photoluminescence (PL) measurements showed the typical donor acceptor pair (DAP) transition at 3.25 eV after annealing at high temp-eratures, which is related to optically active Mg acceptors in GaN. After annealing at 1300 °C a high degree of optical activation of the implanted Mg atoms was reached in the case of low implantation doses. Electrical measurements, performed after removing the AlN-cap and the deposition of Pd/Au contacts, showed no p-type behavior of the GaN samples due to the compensation of the Mg acceptors with native n-type defects.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W11.44 (2000).
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