last updated Wednesday, May 17, 2000 4:59:55 PM.
© 2000 The Materials Research Society
Mary H. Crawford, Jung Han, Michael A. Banas, Samuel M. Myers, Gary A. Petersen, Jeffrey J. Figiel
Sandia National Laboratories
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
Photoluminescence (PL) spectroscopy was carried out on a series of Si-doped bulk InGaN films in the low indium (In) composition regime. Room temperature PL showed a factor of 25 increase in integrated intensity as the In composition was increased from 0 to 0.07. Temperature dependent PL data was fit to an Arrhenius equation to reveal an increasing activation energy for thermal quenching of the PL intensity as the In composition is increased. Time resolved PL measurements revealed that only the sample with highest In ( x=0.07) showed a strong spectral variation in decay time across the T=4K PL resonance, indicative of recombination from localized states at low temperatures. The decay times at room temperature were non-radiatively dominated for all films, and the room temperature (non-radiative) decay times increased with increasing In, from 50-230 psec for x=0-0.07. Our data demonstrate that non-radiative recombination is less effective with increasing In composition.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W11.41 (2000).
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