last updated Wednesday, May 17, 2000 4:59:44 PM.
© 2000 The Materials Research Society
AndrŽ Vantomme, Ming Fang Wu, Susan Hogg, Guido Langouche
Inst. Kern- en Stralingsfysica
Koen Jacobs, Ingrid Moerman
University of Ghent
Madeleine White, Kevin O'Donnell
University of Strathclyde
Leona Nistor, Jef Van Landuyt
University of Antwerp
Hugo Bender
IMEC
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
Rutherford backscattering and channeling spectrometry (RBS), photoluminescence (PL) spectroscopy and transmission electron microscopy (TEM) have been used to investigate macroscopic and microscopic segregation in MOCVD grown InGaN layers. The PL peak energy and In content (measured by RBS) were mapped at a large number of distinct points on the samples. An indium concentration of 40%, the highest measured in this work, corresponds to a PL peak of 710 nm, strongly suggesting that the light-emitting regions of the sample are very indium-rich compared to the average measured by RBS. Cross-sectional TEM observations show distinctive layering of the InGaN films. The TEM study further reveals that these layers consist of amorphous pyramidal contrast features with sizes of order 10 nm. The composition of these specific contrast features is shown to be In-rich compared to the nitride matrix.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W11.38 (2000).
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