last updated Thursday, May 18, 2000 10:56:41 AM.
© 2000 The Materials Research Society
Axel Kaschner, Jens Holst, Ulrich von Gfug, Axel Hoffmann
TU Berlin
Frank Bertram, Till Riemann, Dirk Rudloff, Peter Fischer, Jürgen Christen
Otto-von-Guericke Universität
Robert Averbeck, Henning Riechert
Infineon Technologies
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
We comprehensively studied InGaN/GaN heterostructures grown by molecular beam epitaxy (MBE) using a variety of methods of optical spectroscopy, such as cathodoluminescence microscopy (CL), time-integrated and time-resolved photoluminescence. To correlate the fluctuations in emission wavelength with values for the optical amplification we performed gain measurements in edge-stripe geometry. The lateral homogeneity can be drastically improved using a template of GaN grown on the sapphire substrate by metal-organic vapor phase epitaxy (MOVPE). Gain values up to 62 cm-1 were found in samples with low indium fluctuations, which is comparable to values for high-quality InGaN/GaN heterostructures grown by MOVPE.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W11.34 (2000).
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