last updated Wednesday, May 17, 2000 4:59:27 PM.
© 2000 The Materials Research Society
Atsuhiro Kinoshita
RIKEN (The Institute of Physical and Chemical Research) and Waseda University
H. Hirayama, P. Riblet
RIKEN (The Institute of Physical and Chemical Research)
M. Ainoya
RIKEN (The Institute of Physical and Chemical Research) and Waseda University
A. Hirata
Waseda University
Y. Aoyagi
RIKEN (The Institute of Physical and Chemical Research)
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
Photoluminescence (PL) enhancement due to the screening of piezoelectric field induced by Si-doping is systematically studied in GaN/AlGaN quantum wells (QWs) fabricated by metal organic vapor-phase-epitaxy (MOVPE). The PL enhancement ratio of QWs for Si-doped directly into the wells was much larger than that for doped only into the barrier layers. This result shows that the crystal quality of the quantum well is not so damaged by heavy Si-doping, which is different from the cases of GaAs or InP material systems. The PL intensity enhancement ratio was especially large for thick wells. The typical value of the enhancement ratio was 30 times for a 5 nm-thick single QW. The optimum Si-doping concentration was approximately 4x1018 cm-3 . From the well width dependence of the PL enhancement ratio and PL peak shift under high excitation conditions, we determined that the dominant effect inducing the PL enhancement is screening of piezoelectric field in the QWs. These results indicate that Si-doping is very effective for the application of GaN/AlGaN QWs to optical devices.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W11.32 (2000).
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