MIJ-NSR Vol. 5S1, Art. W11.31, P. Li et al.

The Formation of In-Rich Regions at the Periphery of the Inverted Hexagonal Pits of InGaN Thin-Films Grown by Metalorganic Vapor Phase Epitaxy

P. Li, Soo-jin Chua
National University of Singapore

M Hao, W. Wang
Inst. of Materials Research and Engineering

X. Zhang
National University of Singapore

T. Sugahara, S. Sakai
The University of Tokushima

This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3

Abstract

InGaN thin films were grown by low-pressure metalorganic-vapor-phase-epitaxy (MOVPE) and characterized by cathodoluminescence (CL) and scanning electron microscopy (SEM). SEM images showed that InGaN samples have inverted hexagonal pits which are formed by the In segregation on the (1011) surfaces. Room temperature CL at the wavelengths corresponding to the GaN band edge, the In-poor and In-rich regions showed that the In--rich regions formed at the periphery of the hexagonal pits.

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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W11.31 (2000).

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