This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3

Abstract

We report on the fabrication of device-quality AlN heterostructures grown on SiC for high-temperature electronic devices. The AlN films were grown by pulsed laser deposition (PLD) at substrate temperatures ranging from 25 °C (room temperature) to 1000 °C. The as-grown films were investigated using x-ray diffraction, Rutherford backscattering specttroscopy, ion channeling, atomic force microscopy, and transmission electron microscopy. The AlN films grown above 700 °C were highly c-axis oriented with rocking curve FWHM of 5 to 6 arc-min. The ion channeling minimum yields near the surface region for the AlN films were ~2 to 4%, indicating their high degree of crystallinity. TEM studies indicated that AlN films were epitaxial and single crystalline in nature with a large number of stacking faults as a results of lattice mismatch and growth induced defects. The surface roughness for the films was about 0.5 nm, which is close to the unit cell height of the AlN. Epitaxial TiN ohmic contacts were also developed on SiC, GaN, and AlN by in-situ PLD. Epitaxial TiN/AlN/SiC MIS capacitors with gate areas of 4 * 10^-4 cm²were fabricated, and high-temperature current-voltage (I-V) characteristics were studied up to 450 °C. We have measured leakage current densities of low 10^-8 A/cm²at room temperature, and have mid 10^-3 A/cm²at 45 °C under a field of 2 MV/cm.

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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W11.3 (2000).

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