last updated Wednesday, May 17, 2000 4:59:15 PM.
© 2000 The Materials Research Society
Vladimir E. Kudryashov, Sergey S. Mamakin, Andrey N. Turkin, Alexander E. Yunovich
M.V. Lomonosov MSU
Alexei N. Kovalev, Fedor I. Manyakhin
Moscow Institute of Steel and Alloys
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
Changes of properties of green LEDs based on InxGa1-xN/AlyGa1-y/GaN heterostructures were studied during 150--200 hours at currents J = 30--80 mA. The radiation intensity at low currents (0.1--1 mA) is quite sensitive to such an aging, it falls down 1--100 times. Quantum efficiency and spectral parameters at normal currents (J ≊ 10 mA) change non-monotonically during aging, some degradation is observed after 168 hours. The degradation is observed also after a short (< 1 min) period of reverse current. These phenomena are discussed in terms of under threshold defect"s formation and their migration in the space charge region of p-n-heterojunction. Potential fluctuations in the space charge region are quite sensitive to this process.
Full text of this article is available.
For information about using Adobe Acrobat files, click here .
Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W11.25 (2000).
|
|
|
Reference List Building For information on building reference lists, see About the MIJ-NSR Reference List Builder |