last updated Wednesday, May 17, 2000 4:59:10 PM.
© 2000 The Materials Research Society
Sergiy Bidnyk, Jack Biu Lam, Brian Dean Little, Gordon Hall Gainer, Yong-Hwan Kwon, Jin-Joo Song
Oklahoma State University
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
We report on an experimental study of microstructure-based lasing in an optically pumped GaN/AlGaN separate confinement heterostructure (SCH). We achieved low-threshold ultra-violet lasing in optically pumped GaN/AlGaN separate confinement heterostructures over a wide temperature range. The spacing, directionality, and far-field patterns of the lasing modes are shown to be the result of microcavities that were naturally formed in the structures due to strain relaxation. The temperature sensitivity of the lasing wavelength was found to be twice as low as that of bulk-like GaN films. Based on these results, we discuss possibilities for the development of ultra-violet laser diodes with increased temperature stability of the emission wavelength.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W11.22 (2000).
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