This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3

Abstract

Electron beam pumped surface emitting lasers are of great interest for a variety of applications, such as Laser Cathode Ray Tubes (LCRT) in projection display technology or high power UV light sources for photolithography. Two distributed Bragg reflector (DBR) samples were grown by plasma assisted molecular beam epitaxy (PAMBE). The active regions of the samples are a GaN:Si bulk layer and a multihetero (MH) structure, respectively. Also, a separately grown single DBR stack was studied to find optical transmission and reflection properties which were compared to transfer matrix simulations. Scanning electron beam pumping at 80 K with an excitation energy of 40 keV at varying beam currents revealed luminescence emission maxima located at about 3.45 eV for the sample with the MH structure active region. Optical modes appeared for excitation powers greater than 0.85 MW/ cm². Further increasing the excitation power density the number of modes increased and a broadening and redshift of the luminescence spectrum could be observed. Based on our experimental results, we discuss the dependence of optical parameters of the nitride vertical cavity and sample surface reactions on primary electron beam power.

Full text of this article is available.

• Portable Document Format (Adobe Acrobat) Version (99K)

For information about using Adobe Acrobat files, click here .

Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W11.21 (2000).

last updated Wednesday, May 17, 2000 4:59:04 PM.
© 2000 The Materials Research Society