This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3

Abstract

Lateral and vertical electron transport parameters were investigated in lightly doped n-GaN films, grown by MBE. Diodes were fabricated by forming Schottky barriers on n^--GaN films using a mesa-etched vertical geometry. Doping concentrations and barrier heights were determined, from C-V measurements, to be 8-9x10¹⁶ cm^-3 and 0.95-1.0 eV respectively. Reverse saturation current densities were measured to be in the 1-10x10^-9 A/cm²range. Using the diffusion theory of Schottky barriers, vertical mobility values were determined to be 950 cm²/V-s. Lateral mobility in films grown under similar conditions was determined by Hall effect measurements to be 150-200 cm²/V-s. The significant increase in mobility for vertical transport is attributed to reduction in electron scattering by charged dislocations.

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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W11.2 (2000).

last updated Wednesday, May 17, 2000 4:58:09 PM.
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