last updated Wednesday, May 17, 2000 4:58:58 PM.
© 2000 The Materials Research Society
Veit Schwegler, M. Seyboth, S. Schad, M. Scherer, C. Kirchner, M. Kamp, U. Stempfle, W. Limmer, R. Sauer
University of Ulm
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
The temperature distribution in InGaN-MQW light emitting diodes was examined during operation with spatially resolved micro-Raman and micro-Electroluminescence measurements. The experimental results were compared to finite element simulations. A good agreement between the different experimental and calculated data is found. Maximum operation temperatures up to 140 °C at a moderate forward currents of 30 mA are revealed by all three independent methods. Influences of substrate thickness, different substrates, and even bond-wires are shown.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W11.18 (2000).
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