last updated Wednesday, May 17, 2000 4:58:53 PM.
© 2000 The Materials Research Society
John D. Albrecht
U.S. Naval Research Laboratory
P. Paul Ruden
University of Minnesota
Mario G. Ancona
U.S. Naval Research Laboratory
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
A new model is used to examine the DC output characteristics of AlGaN/GaN heterostructure field effect transistors. The model is based on the charge-control/gradual-channel approximation and takes into account the non-linear current vs. voltage characteristics of the ungated AlGaN/GaN heterostructure channel regions. The model also includes thermal effects associated with device self-heating. For the power dissipation levels considered for many applications, the thermal degradation of the carrier drift velocity is shown to cause a negative output conductance in saturation. The temperature is incorporated self-consistently into the model through the field and temperature dependent mobility obtained from Monte Carlo transport simulations for electron transport in GaN. Calculated results presented for the DC output characteristics of several AlGaN/GaN field effect transistors show a strong dependence on the thermal properties of the substrate material. The substrate materials considered in this work are sapphire, SiC, AlN, and GaN.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W11.15 (2000).
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