MIJ-NSR Vol. 5S1, Art. W11.1, Anand V Sampath et al.

A Comparative Study of GaN Diodes Grown by MBE on Sapphire and HVPE-GaN/Sapphire Substrates

Anand V Sampath, Mira Misra, K. Seth, Y. Fedyunin, H. M. Ng, E. Iliopoulos, Z. Feit, Theodore Moustakas
Boston University

This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3

Abstract

In this paper we report on the fabrication and characterization of GaN diodes (Schottky and p-n junctions) grown by plasma assisted MBE. We observed that Schottky diodes improve both in reverse as well as forward bias when deposited on 5 µm thick HVPE n⁺-GaN/sapphire instead of bare sapphire substrates. These improvements are attributed to the reduction of disloctions in the MBE homoepitaxially grown GaN. Similar benefits are observed in the reverse bias of the p-n junctions which according to EBIC measurements are attributed to the reduction of etch pits in the MBE grown p-GaN.

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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W11.1 (2000).

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