last updated Wednesday, May 17, 2000 4:57:58 PM.
© 2000 The Materials Research Society
Eliana Kaminska, A. Piotrowska, A. Barcz
Institute of Electron Technology
J. Jasinski
Warsaw University
M. Zielinski
Institute of Physics, PAS
K. Golaszewska
Institute of Electron Technology
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
We have shown that Zr-based metallization can effectively remove hydrogen from the p-type GaN subsurface, which eventually leads to the formation of an ohmic contact. As the release of hydrogen starts at ~900 °C, the thermal stability of the contact system is of particular importance. The remarkable thermal behavior of the ZrN/ZrB2 metallizat ion is associated to the microstructure of each individual Zr-based compound, as well as to the interfacial crystalline accommodation.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W10.9 (2000).
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