last updated Wednesday, May 17, 2000 4:57:53 PM.
© 2000 The Materials Research Society
X.A. Cao, Stephen J Pearton, G.T. Dang, A.P. Zhang, F. Ren
University of Florida
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
The near-surface (400-500Å) of p-GaN exposed to high density plasmas is found to become more compensated through the introduction of shallow donors. At high ion fluxes or ion energies there can be type-conversion of this surface region. Two different methods for removal of the damaged surface were investigated; wet etching in KOH, which produced self-limiting etch depths or thermal annealing under N2 which largely restored the initial electrical properties.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W10.8 (2000).
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