last updated Wednesday, May 17, 2000 4:57:48 PM.
© 2000 The Materials Research Society
William R Wampler, John C Barbour, Carl H Seager, Samuel M Myers, Alan F Wright, Jung Han
Sandia National Laboratories
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
We have used ion channeling to examine the lattice configuration of deuterium in Mg doped GaN grown by MOCVD. The deuterium is introduced by exposure to gas phase or ECR plasmas. A density functional approach including lattice relaxation, was used to calculate total energies for various locations and charge states of hydrogen in the wurtzite Mg doped GaN lattice. Results of channeling measurements are compared with channeling simulations for hydrogen at lattice locations predicted by density functional theory.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W10.7 (2000).
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