last updated Wednesday, May 17, 2000 4:57:42 PM.
© 2000 The Materials Research Society
Stephen J. Pearton, Hyun Cho, Fan Ren
University of Florida
J. -I. Chyi
National Central University
Jung Han
Sandia National Laboratories
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
The status of understanding of the behavior of hydrogen in GaN and related materials is reviewed. In particular, we discuss the amount of residual hydrogen in MOCVD-grown device structures such as heterojunction bipolar transistors, thyristors and p-i-n diodes intended for high power, high temperature applications. In these structures, the residual hydrogen originating from the growth precursors decorates Mg-doped layers and AlGaN/GaN interfaces. There is a significant difference in the diffusion characteristics and thermal stability of implanted hydrogen between n- and p-GaN, due to the stronger affinity of hydrogen to pair with acceptor dopants and possibly to the difference in H2 formation probability.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W10.6 (2000).
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