High-Quality Non-Alloyed Pt Ohmic Contacts to p-Type GaN Using Two-step Surface Treatment


Ja-Soon Jang, Seong-Ju Park, Tae-Yeon Seong
Kwangju Institute of Science Technology

This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3

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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W10.4 (2000).


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MRS Internet Journal of Nitride Semiconductor Research
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