MIJ-NSR Vol. 5S1, Art. W1.9, J. D. Brown et al.

High-Sensitivity Visible-Blind AlGaN Photodiodes and Photodiode Arrays

J. D. Brown
North Carolina State University

J. Matthews, S. Harney, J. C. Boney, J. F. Schetzina
Physics Deptartment, North Carolina State University

J. D. Benson, K. V. Dang
Night Vision and Electronic Sensors Directorate

Thomas Nohava, Wei Yang, Subash Krishnankutty
Honeywell Technology Center

This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3

Abstract

Visible-blind UV cameras based on a 32 x 32 array of backside-illuminated GaN/AlGaN p-i-n photodiodes have been successfully demonstrated. The photodiode arrays were hybridized to silicon readout integrated circuits (ROICs) using In bump bonds. Output from the UV cameras were recorded at room temperature at frame rates of 30-240 Hz. These new visible-blind digital cameras are sensitive to radiation from 285- 365 nm in the UV spectral region.

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References Citing this Article

[1] J.D. Brown, J. Boney, J. Matthews, P. Srinivasan, J.F. Schetzina, Thomas Nohava, Wei Yang, Subash Krishnankutty, MRS Internet J. Nitride Semicond. Res. 5, 6 (2000).

[2] J.D. Brown, Jizhong Li, P. Srinivasan, J. Matthews, J.F. Schetzina, MRS Internet J. Nitride Semicond. Res. 5, 9 (2000).

Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W1.9 (2000).

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