last updated Wednesday, May 17, 2000 4:51:05 PM.
© 2000 The Materials Research Society
Masayoshi Koike, S. Yamasaki, Yuta Tezen, S. Nagai, S. Iwayama, A. Kojima
Toyoda Gosei Co., Ltd.
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
GaN-based short wavelength laser diodes are the most promising key device for a digital versatile disk. We have been improving the important points of the laser diodes in terms of optical guiding layers, mirror facets. The continuous wave laser irradiation at room temperature could be achieved successfully by reducing the threshold current to 60 mA (4 kA/cm2). We have tried to apply the multi low temperature buffer layers to the laser diodes for the first time to reduce the crystal defects.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W1.2 (2000).
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