This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3

Abstract

Low-temperature (LT-) AlN interlayer reduces tensile stress during growth of Al_xGa_1-xN, while simultaneously acts as the dislocation filter, especially for dislocations of which Burger"s vector contains [0001] components. UV photodetectors using thus-grown high quality Al_xGa_1-xN layers were fabricated. The dark current bellow 50 fA at 10 V bias for 10 mm strip allowing a photocurrent to dark current ratio greater than one even at 40 nW/cm²have been achieved.

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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W1.10 (2000).

last updated Wednesday, May 17, 2000 4:51:43 PM.
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