| B. Monemar, Editor in Chief | C. R. Abernathy, Associate Editor in Chief | K. Hiramatsu, Associate Editor in Chief |
Volume Guest Editors |
|||
| Hiroshi Amano | Randall Feenstra | Thomas Myers | Michael Shur |
Published 2000. A keyword index and an author index are also available.
W1.2. Room Temperature CW Operation of GaN-Based Blue Laser Diodes by GaInN/GaN Optical Guiding Layers
Masayoshi Koike, S. Yamasaki, Yuta Tezen, S. Nagai, S. Iwayama, A. Kojima.
W1.3. Improved Characteristics of InGaN Multi-Quantum-Well Laser Diodes Grown on Laterally Epitaxially Overgrown GaN on Sapphire
Monica Hansen, P.T. Fini, Lijie Zhao, Amber Abare, Larry A. Coldren, Jim Speck, Steven P. DenBaars.
W1.4. Effect of AlGaN/GaN Strained Layer Superlattice Period on InGaN MQW Laser Diodes
Monica Hansen, Amber C. Abare, Peter Kozodoy, Thomas M. Katona, Michael D. Craven, Jim S. Speck, Umesh K. Mishra, Larry A. Coldren, Steven P. DenBaars.
W1.6. Spatially Resolved Electroluminescence of InGaN-MQW-LEDs
Veit Schwegler, M. Seyboth, C. Kirchner, M. Scherer, M. Kamp, P. Fischer, J. Christen, M. Zacharias.
W1.8. High Reflectance III-Nitride Bragg Reflectors Grown by Molecular Beam Epitaxy
Hock Min Ng, Theodore D. Moustakas.
W1.9. High-Sensitivity Visible-Blind AlGaN Photodiodes and Photodiode Arrays
J. D. Brown, J. Matthews, S. Harney, J. C. Boney, J. F. Schetzina, J. D. Benson, K. V. Dang, Thomas Nohava, Wei Yang, Subash Krishnankutty.
W1.10. High-Quality AlxGa1-xN Using Low Temperature-Interlayer and its Application to UV Detector
Motoaki Iwaya, Shinji Terao, Nobuaki Hayashi, T. Kashima, Theeradatch Detchprohm, Hiroshi Amano, Isamu Akasaki, Akira Hirano, Cyril Pernot.
W2.1. Pendeo-Epitaxial Growth and Characterization of GaN and Related Materials on 6H-SiC(0001) and Si(111) Substrates
Robert F. Davis, Thomas Gehrke, Kevin J. Linthicum, Tsvetanka S. Zheleva, Pradeep Rajagopal, Christian A. Zorman, Mehran Mehregany.
W2.3. Fabrication of GaN With Buried Tungsten (W) Structures Using Epitaxial Lateral Overgrowth (ELO) via LP-MOVPE
Hideto Miyake, Motoo Yamaguchi, Masahiro Haino, Atsushi Motogaito, Kazumasa Hiramatsu, Shingo Nambu, Yasutoshi Kawaguchi, Nobuhiko Sawaki, Yasushi Iyechika, Takayoshi Maeda, Isamu Akasaki.
W2.4. Advanced PENDEOEPITAXY(TM) of GaN and AlxGa1-xN Thin Films on SiC(0001) and Si(111) Substrates via Metalorganic Chemical Vapor Deposition
Thomas Gehrke, Kevin J. Linthicum, Pradeep Rajagopal, Edward A. Preble, Robert F. Davis.
W2.5. A TEM Study of GaN Grown by ELO on (0001) 6H-SiC
Pierre Ruterana, Bernard Beaumont, Pierre Gibart, Yu Melnik.
W2.6. Dislocation Mechanisms in the GaN Lateral Overgrowth by Hydride Vapor Phase Epitaxy
T. S. Kuan, C. K. Inoki, Y. Hsu, D. L. Harris, R. Zhang, S. Gu, T. F. Kuech.
W2.8. Mass Transport, Faceting and Behavior of Dislocations in GaN
Shugo Nitta, Takayuki Kashima, Michihiko Kariya, Yohei Yukawa, Shigeo Yamaguchi, Hiroshi Amano, Isamu Akasaki.
W2.11. Dislocation Arrangement in a Thick LEO GaN Film on Sapphire
Kathleen A Dunn, Sue Babcock, Donald S Stone, Richard J Matyi, Ling Zhang, Thomas F. Kuech.
W3.3. Polarity Determination for MOCVD Growth of GaN on Si(111) by Convergent Beam Electron Diffraction
Lijie Zhao, Hughes Marchand, Paul Fini, Steven Denbaars, Umesh Mishra, Jim Speck.
W3.8. Structural Properties of Laterally Overgrown GaN
Rong Zhang, Y. Shi, Y. G. Zhou, B. Shen, Y. D. Zheng, T. S. Kuan, S. Gu, L. Zhang, D. M. Hansen, T. F. Kuech.
W3.12. Integration of PLZT and BST Family Oxides with GaN
Andrei V Osinsky, V. N. Fuflyigin, F. Wang, P. I. Vakhutinsky, P. E. Norris.
W3.13. HVPE and MOVPE GaN Growth on Slightly Misoriented Sapphire Substrates
Olivier Parillaud, Volker Wagner, Hans-Jörg Bühlmann, François Lelarge, Marc Ilegems.
W3.14. Hydride Vapour Phase Homoepitaxial Growth of GaN on MOCVD-Grown 'Templates'
Tanya Milkova Paskova, S. Tungasmita, E Valcheva, E. Svedberg, B. Arnaudov, S. Evtimova, P. Persson, A. Henry, R. Beccard, M. Heuken, B. Monemar.
W3.15. The Nature and Impact of ZnO Buffer Layers on the Initial Stages of the Hydride Vapor Phase Epitaxy of GaN
S. Gu, Rong Zhang, Jingxi Sun, Ling Zhang, Thomas F. Kuech.
W3.16. Visible and Infrared Emission of GaN:Er Thin Films Grown by Sputtering
Hong Chen, K. Gurumurugan, M. E. Kordesch, W. M. Jadwisienczak, H. J. Lozykowski.
W3.18. Growth Kinetics of GaN Thin Films Grown by OMVPE Using Single Source Precursors
Roland A. Fischer, Andreas Wohlfart, Anjana Devi, Wolfram Rogge.
W3.26. Optical Properties of Manganese Doped Amorphous and Crystalline Aluminum Nitride Films
Meghan L Caldwell, Hugh H Richardson, M. E. Kordesch.
W3.27. A Study of the Effect of V/III Flux Ratio and Substrate Temperature on the In Incorporation Efficiency in InxGa1-x/GaN Heterostructures Grown by RF Plasma-Assisted Molecular Beam Epitaxy
Mark L. O'Steen, F. Fedler, R. J. Hauenstein.
W3.29. Surface Morphology of GaN: Flat Versus Vicinal Surfaces
Maohai Xie, Sean M. Seutter, Lianxi Zheng, Sauha Cheung, YeeFai Ng, Huasheng Wu, Shuk Yin Tong.
W3.30. Growth of InN by MBE
W.-L. Chen, R. L. Gunshor, Jung Han, K. Higashimine, N. Otsuka.
W3.31. Evidence from EELS of Oxygen in the Nucleation Layer of an MBE Grown III-N HEMT
Tyler J. Eustis, John Silcox, Michael J Murphy, William J Schaff.
W3.33. Formation of BN and AlBN During Nitridation of Sapphire Using RF Plasma Sources
A. J. Ptak, K. S. Ziemer, L. J. Holbert, C. D. Stinespring, Thomas H Myers.
W3.35. MBE Growth Of GaN Films In Presence Of Surfactants: The Effect Of Mg And Si
Guido Mula, Bruno Daudin, Christoph Adelmann, Philippe Peyla.
W3.36. The Effect of Al in Plasma-Assisted MBE-Grown GaN
Otto Zsebök, Jan V Thordson, Qingxiang Zhao, Ulf Södervall, Lars Ilver, Thorvald G Andersson.
W3.40. Electrical Properties of Cubic InN and GaN Epitaxial Layers as Function of Temperature
J.R.L. Fernandez, V.A. Chitta, Eduardo Abramof, A. Ferreira da Silva, J.R. Leite, A. Tabata, D.J. As, T. Frey, D. Schikora, K. Lischka.
W3.41. Role of Arsenic Hexagonal Growth-Suppression on a Cubic GaNAs Growth Using Metalorganic Chemical Vapor Deposition
Seikoh Yoshida, T. Kimura, J. Wu, J. Kikawa, K. Onabe, Y. Shiraki.
W3.43. Metal Organic Vapor Phase Epitaxy of GaAsN/GaAs Quantum Wells Using Tertiarybutylhydrazine
Torsten K. Schmidtling, M. Klein, U. W. Pohl, W. Richter.
W3.47. TEM Study of the Morphology Of GaN/SiC (0001) Grown at Various Temperatures by MBE
Wendy Lynn Sarney, Lourdes Salamanca-Riba, Vidhya Ramachandran, Randall Feenstra, D. W. Greve.
W3.50. Microstructure and Physical Properties of GaN Films on Sapphire Substrates
Z. Chen, R. Zhang, J. Zhu, B. Shen, Y. Zhou, P. Chen, W. Li, Y. Shi, S. Gu, Y. D. Zheng.
W3.52. Structural Evolution of GaN During Initial Stage MOCVD Growth
Chong Cook Kim, Jung Ho Je, Min-Su Yi.
W3.54. Structural Properties of (GaIn)(AsN)/GaAs MQW Structures Grown by MOVPE
C. Giannini, E. Carlino, L. Tapfer, F. Höhnsdorf, J. Koch, W. Stolz.
W3.55. Formation and Stability of the Prismatic Stacking Fault in Wurtzite (Al,Ga,In) Nitrides
Pierre Ruterana, Antoine Bere, Gerard Nouet.
W3.64. GaN Decomposition in Ammonia
Daniel D Koleske, Alma E. Wickenden, Richard L. Henry.
W3.65. Surface Activity of Magnesium During GaN Molecular Beam Epitaxial Growth
Vidhya Ramachandran, Randall M Feenstra, John E. Northrup, David W. Greve.
W3.72. Simulations of Defect-Interface Interactions in GaN
James Chisholm, Paul D Bristowe.
W3.77. Effect of the Doping and the Al Content on the Microstructure and Morphology of Thin AlxGa1-xN Layers Grown by MOCVD
J. H. Mazur, Mourad Benamara, Z. Liliental-Weber, W. Swider, J. Washburn, C. J. Eiting, R. D. Dupuis.
W3.80. Electrical Properties of Oxygen Doped GaN Grown by Metalorganic Vapor Phase Epitaxy
R. Y. Korotkov, B. W. Wessels.
W3.81. Optical and Electrical Properties of MBE Grown Cubic GaN/GaAs Epilayers Doped by Si
Donat Josef As, Andreas Richter, Joerg Busch, Bernd Schoettker, Martin Luebbers, Juergen Mimkes, Detlef Schikora, Klaus Lischka, Wilhelm Kriegseis, Wilhelm Burkhardt, Bruno K. Meyer.
W3.82. Activation of Beryllium-Implanted GaN by Two-Step Annealing
Yuejun Sun, Leng Seow Tan, Soo-jin Chua, Savarimuthu Prakash.
W3.84. Co-Doping Characteristics of Si and Zn with Mg in p-Type GaN
Ki Soo Kim, Chang Seok Oh, Myung Soo Han, Chi Sun Kim, Gye Mo Yang, Jeon Wook Yang, Chang-Hee Hong, Chang Joo Youn, Kee Young Lim, Hyung Jae Lee.
W3.85. Efficient Acceptor Activation in AlxGa1-xN/GaN Doped Superlattices
Ian D Goepfert, E. F. Schubert, Andrei Osinsky, Peter E. Norris.
W3.89. Doping Dependence of the Thermal Conductivity of Hydride Vapor Phase Epitaxy Grown n-GaN/Sapphire (0001) Using a Scanning Thermal Microscope
Doru I Florescu, V A Asnin, L G Mourokh, Fred H Pollak, R J Molnar.
W3.90. High Temperature Hardness of Bulk Single Crystal GaN
Ichiro Yonenaga, Tetsuya Hoshi, Akira Usui.
W4.4. AlGaN/GaN High Electron Mobility Transistor Structure Design and Effects on Electrical Properties
Edwin L Piner, David M Keogh, Jeff S Flynn, Joan M Redwing.
W4.5. Negative Differential Conductivity in AlGaN/GaN HEMTs: Real Space Charge Transfer from 2D to 3D GaN States?
Jianyu Deng, Remis Gaska, Michael S. Shur, Asif Khan, J. W. Yang.
W4.7. Two-Dimensional Electron Gas Transport Properties in AlGaN/(In)GaN/AlGaN Double-Heterostructure Field Effect Transistors
Narihiko Maeda, Tadashi Saitoh, Kotaro Tsubaki, Toshio Nishida, Naoki Kobayashi.
W4.8. High-Temperature Reliability of GaN Electronic Devices
Seikoh Yoshida, Joe Suzuki.
W4.9. Fabrication and Characterization of GaN Junction Field Effect Transistors
Lei Zhang, Luke F. Lester, Albert G. Baca, Randy J. Shul, Ping C. Chang, Christi G. Willison, Umesh K. Mishra, Steve P. Denbaars, John C. Zolper.
W5.5. TEM Study of Bulk AlN Growth by Physical Vapor Transport
Wendy Lynn Sarney, Lourdes Salamanca-Riba, Tim Hossain, P. Zhou, H N Jayatirtha, Hyoung Ho Kang, R. D. Vispute, Michael Spencer, Ken Jones.
W5.7. Thermal Expansion of GaN at Low Temperatures - A Comparison of Bulk and Homo- and Heteroepitaxial Layers
Verena Kirchner, Heidrun Heinke, Sven Einfeldt, Detlef Hommel, Jaroslaw Z Domagala, Michal Leszczynski.
W5.8. The Role of the Multi Buffer Layer Technique on the Structural Quality of GaN
Mourad Benamara, zuzanna Liliental-Weber, J. H. Mazur, W. Swider, J. Washburn, M. Iwaya, I. Akasaki, H. Amano.
W5.10. Probing Nitride Thin Films in 3-Dimensions Using a Variable Energy Electron Beam
Carol Trager-Cowan, D McColl, F Sweeney, S T F Grimson, J-F Treguer, A Mohammed, P G Middleton, S K Manson-Smith, K P O'Donnell, W Van der Stricht, I Moerman, P Demeester, M F Wu, A Vantomme, D Zubia, S D Hersee.
W6.2. MOVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics
Jung Han, Jeffrey Figiel, Gary Petersen, Samuel Myers, Mary Crawford, Michael Banas, Sean Hearne.
W6.3. Homoepitaxial Growth on Misoriented GaN Substrates by MOCVD
A. R.A. Zauner, J. J. Schermer, W. J.P. van Enckevort, V. Kirilyuk, J. L. Weyher, I. Grzegory, P. R. Hageman, P. K. Larsen.
W6.5. AlN Wafers Fabricated by Hydride Vapor Phase Epitaxy
Andrey E Nikolaev, Irina Nikitina, Andrey Zubrilov, Marina Mynbaeva, Yuriy Melnik, Vladimir Dmitriev.
W6.6. GaN 20-mm Diameter Ingots Grown from Melt-Solution by Seeded Technique
Vitaly A. Sukhoveyev, Vladimir A. Ivantsov, Irina P. Nikitina, Alexandr I. Babanin, A. Y. Polyakov, A. V. Govorkov, N. B. Smirnov, M. G. Mil'vidskii, Vladimir Dmitriev.
W6.7. Preparation and Characterization of Single-Crystal Aluminum Nitride Substrates
Leo J Schowalter, Juan C Rojo, Nikolai Yakolev, Yuriy Shusterman, Katherine Dovidenko, Rungjun Wang, Ishwara Bhat, Glen A Slack.
W6.8. Growth of Crack-Free Thick AlGaN Layer and its Application to GaN Based Laser Diodes
Isamu Akasaki, Satoshi Kamiyama, Theeradatch Detchprohm, Tetsuya Takeuchi, Hiroshi Amano.
W8.1. High-Quality AlGaN/GaN Grown on Sapphire by Gas-Source Molecular Beam Epitaxy Using a Thin Low-Temperature AlN Layer
M. J. Jurkovic, L. K. Li, B. Turk, W. I. Wang, S. Syed, D. Simonian, H. L. Stormer.
W8.3. High-Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia
Sergey A. Nikishin, Nikolai N Faleev, Vladimir G. Antipov, Sebastien Francoeur, Luis Grave de Peralta, George A. Seryogin, Mark Holtz, Tat'yana I. Prokofyeva, George Chu, Andrei S. Zubrilov, Vyacheslav A. Elyukhin, Irina P. Nikitina, Andrei Nikolaev, Yuriy Melnik, Vladimir Dmitriev, Henryk Temkin.
W8.4. MBE Growth of Nitride-Arsenide Materials for Long Wavelength Optoelectronics
Sylvia G. Spruytte, Christopher W. Coldren, Ann F. Marshall, Michael C. Larson, James S. Harris.
W9.3. Structural and Electronic Properties of Line Defects in GaN
Joachim Elsner, Alexander Blumenau, Thomas Frauenheim, Robert Jones, Malcolm I Heggie.
W9.4. Simulation of H Behavior in p-GaN(Mg) at Elevated Temperatures
Samuel M. Myers, Alan F. Wright, Gary A. Petersen, Carlton H. Seager, Mary H. Crawford, W. R. Wampler, Jung Han.
W9.7. Mg Segregation, Difficulties of P-Doping in GaN
Zuzanna Liliental-Weber, Mourad Benamara, W. Swider, J. Washburn, I. Grzegory, S. Porowski, R. D. Dupuis, Brian J. Eiting.
W9.8. Optical Activation Behavior of Ion Implanted Acceptor Species in GaN
B. J.. Skromme, G. L. Martinez.
W10.3. Characteristics of Ti/Pt/Au Ohmic Contacts on p-Type GaN/A1xGA1-xN Superlattices
Ling Zhou, Farid Khan, A. T. Ping, A. Osinski, I. Adesida.
W10.4. High-Quality Non-Alloyed Pt Ohmic Contacts to p-Type GaN Using Two-step Surface Treatment
Ja-Soon Jang, Seong-Ju Park, Tae-Yeon Seong.
W10.5. Electrical Measurements in GaN: Point Defects and Dislocations
David C Look, Zhaoqiang Fang, Laura Polenta.
W10.6. Properties and Effects of Hydrogen in GaN
Stephen J. Pearton, Hyun Cho, Fan Ren, J. -I. Chyi, Jung Han, R. G. Wilson.
W10.7. Lattice Location of Deuterium in Plasma and Gas Charged Mg Doped GaN
William R Wampler, John C Barbour, Carl H Seager, Samuel M Myers, Alan F Wright, Jung Han.
W10.8. Surface Conversion Effects in Plasma-Damaged p-GaN
X.A. Cao, Stephen J Pearton, G.T. Dang, A.P. Zhang, F. Ren, R.J. Shul, L. Zhang, R. Hickman, J.M. Van Hove.
W10.9. Zirconium Mediated Hydrogen Outdiffusion from p-GaN
Eliana Kaminska, A. Piotrowska, A. Barcz, J. Jasinski, M. Zielinski, K. Golaszewska, R. F. Davis, E. Goldys, K. Tomsia.
W11.1. A Comparative Study of GaN Diodes Grown by MBE on Sapphire and HVPE-GaN/Sapphire Substrates
Anand V Sampath, Mira Misra, K. Seth, Y. Fedyunin, H. M. Ng, E. Iliopoulos, Z. Feit, Theodore Moustakas.
W11.2. Vertical Transport Properties of GaN Schottky Diodes Grown by Molecular Beam Epitaxy
Mira Misra, Anand V Sampath, Theodore Moustakas.
W11.3. Pulsed-Laser-Deposited AlN Films for High-Temperature SiC MIS Devices
R. D. Vispute, A. Patel, K. Baynes, B. Ming, R. P. Sharma, T. Venkatesan, C. J. Scozzie, A. Lelis, T. Zheleva, K. A. Jones.
W11.5. Fabrication and Characterization of Metal-Ferroelectric-GaN Structures
W. P. Li, R. Zhang, J. Yin, X. H. Liu, Y. G. Zhou, B. Shen, P. Chen, Z. Z. Chen, Y. Shi, R. L. Jiang, Z. G. Liu, Y. D. Zheng, Z. C. Huang.
W11.8. Growth and Characterization of Piezoelectrically Enhanced Acceptor-Type AlGaN/GaN Heterostructures
A. Michel, D. Hanser, R. F. Davis, D. Qiao, S. S. Lau, L. S. Yu, W. Sun, P. Asbeck.
W11.9. Low-Frequency Noise in SiO2 /AlGaN/GaN Heterostructures on SiC and Sapphire Substrates
Nezih Pala, R. Gaska, M. Shur, J. W. Yang, M. A. Khan.
W11.10. Electrical Transport of an AlGaN/GaN Two-Dimensional Electron Gas
Adam W. Saxler, Philippe Debray, Ronald E. Perrin, Said Elhamri, William C. Mitchel, Chris R. Elsass, I. P. Smorchkova, B. Heying, E. Haus, P. Fini, J. P. Ibbetson, S. Keller, P. M. Petroff, S. P. DenBaars, U. K. Mishra, J. S. Speck.
W11.12. Correlation Between Sheet Carrier Density-Mobility Product and Persistent Photoconductivity In AlGaN/GaN Modulation Doped Heterostructures
Jizhong Li, Jing Li, Jingyu Lin, Hongxing Jiang.
W11.13. Full Band Monte Carlo Comparison of Wurtzite and Zincblende Phase GaN MESFETs
Maziar Farahmand, Kevin Brennan.
W11.15. New Materials-Theory-Based Model for Output Characteristics of AlGaN/GaN Heterostructure Field Effect Transistors
John D. Albrecht, P. Paul Ruden, Mario G. Ancona.
W11.18. Temperature Distribution in InGaN-MQW LEDs Under Operation
Veit Schwegler, M. Seyboth, S. Schad, M. Scherer, C. Kirchner, M. Kamp, U. Stempfle, W. Limmer, R. Sauer.
W11.21. Electron Beam Pumping in Nitride Vertical Cavities With GaN/A10.25Ga0.75 Bragg Reflectors
Harald Klausing, Jochen Aderhold, Fritz Fedler, David Mistele, Jens Stemmer, Olga Semchinova, JŸrgen Graul, JŸrgen DŠnhardt, Siegfried Panzer.
W11.22. Microstructure-based Lasing in GaN/AlGaN Separate Confinement Heterostructures
Sergiy Bidnyk, Jack Biu Lam, Brian Dean Little, Gordon Hall Gainer, Yong-Hwan Kwon, Jin-Joo Song, Gary E. Bulman, Hua-Shuang Kong.
W11.25. Dependence of Aging on Inhomogeneities in InGaN/AlGaN/GaN Light-Emitting Diodes
Vladimir E. Kudryashov, Sergey S. Mamakin, Andrey N. Turkin, Alexander E. Yunovich, Alexei N. Kovalev, Fedor I. Manyakhin.
W11.31. The Formation of In-Rich Regions at the Periphery of the Inverted Hexagonal Pits of InGaN Thin-Films Grown by Metalorganic Vapor Phase Epitaxy
P. Li, Soo-jin Chua, M Hao, W. Wang, X. Zhang, T. Sugahara, S. Sakai.
W11.32. Emission Enhancement of GaN/AlGaN Single-Quantum-Wells Due to Screening of Piezoelectric Field
Atsuhiro Kinoshita, H. Hirayama, P. Riblet, M. Ainoya, A. Hirata, Y. Aoyagi.
W11.34. Correlation Between Structural Properties and Optical Amplification in InGaN/GaN Heterostructures Grown by Molecular Beam Epitaxy
Axel Kaschner, Jens Holst, Ulrich von Gfug, Axel Hoffmann, Frank Bertram, Till Riemann, Dirk Rudloff, Peter Fischer, Jürgen Christen, Robert Averbeck, Henning Riechert.
W11.35. Optical Properties of AlGaN Quantum Well Structures
Hideki Hirayama, Yasushi Enomoto, Atsuhiro Kinoshita, Akira Hirata, Yoshinobu Aoyagi.
W11.38. Comparative Study of Structural Properties and Photoluminescence in InGaN Layers with a High In Content
AndrŽ Vantomme, Ming Fang Wu, Susan Hogg, Guido Langouche, Koen Jacobs, Ingrid Moerman, Madeleine White, Kevin O'Donnell, Leona Nistor, Jef Van Landuyt, Hugo Bender.
W11.39. Phonons and Free Carriers in a Strained Hexagonal GaN-AlN Superlattice Measured by Infrared Ellipsometry and Raman Spectroscopy
Mathias M Schubert, Alexander Kasic, Tomas E Tiwald, John A Woollam, Volker Haerle, Ferdinand Scholz.
W11.41. Optical Spectroscopy of InGaN Epilayers in the Low Indium Composition Regime
Mary H. Crawford, Jung Han, Michael A. Banas, Samuel M. Myers, Gary A. Petersen, Jeffrey J. Figiel.
W11.44. Photoluminescence Characterization of Mg Implanted GaN
Carsten Ronning, Hans C. Hofsaess, Arno Stoetzler, Manfred Deicher, Eric P. Carlson, Philip J. Hartlieb, Thomas Gehrke, Pradeep Rajagopal, Robert F Davis.
W11.45. An Investigation of Long and Short Time-Constant Persistent Photoconductivity in Undoped GaN Grown by RF-Plasma Assisted Molecular Beam Epitaxy
A. J. Ptak, V. A. Stoica, L. J. Holbert, M. Moldovan, Thomas H. Myers.
W11.46. The Use of Micro-Raman Spectroscopy to Monitor High-Pressure High-Temperature Annealing of Ion-Implanted GaN Films
Martin Kuball, J.M. Hayes, T. Suski, J. Jun, H. H. Tan, J. S. Williams, C. Jagadish.
W11.49. Prism Coupling as a Non-Destructive Tool for Optical Characterization of (Al,Ga) Nitride Compounds
El Hadj Dogheche, Brahim Belgacem, Denis Remiens, Pierre Ruterana, Franck OMNES.
W11.50. Deep Level Related Yellow Luminescence in p-type GaN Grown by MBE on (0001) Sapphire
Giancarlo Salviati, Nicola Armani, Carlo Zanotti-Fregonara, Enos Gombia, Martin Albrecht, Horst Strunk, Markus Mayer, Markus Kamp, Andrea Gasparotto.
W11.51. A Study of Annealed GaN Grown by Molecular Beam Epitaxy Using Photoluminescence Spectroscopy
Abigail Bell, Ian Harrison, Dimitris Korakakis, Eric C Larkins, Jonathan M Hayes, Martin Kuball.
W11.52. Nonlinear Optical Characterization of GaN Layers Grown by MOCVD on Sapphire
Ivan Tiginyanu, I. V. Kravetsky, D. Pavlidis, A. Eisenbach, R. Hildebrandt, G. Marowsky, H. L. Hartnagel.
W11.54. Spectroscopic Ellipsometry Analysis of InGaN/GaN and AlGaN/GaN Heterostructures Using a Parametric Dielectric Function Model
Joachim Wagner, Arun Ramakrishnan, Harald Obloh, Michael Kunzer, Klaus Köhler, B. Johs.
W11.55. Picosecond Photoinduced Reflectivity Studies of GaN Prepared by Lateral Epitaxial Overgrowth
Michael Wraback, H. Shen, C. J. Eiting, J. C. Carrano, R. D. Dupuis.
W11.56. The Effect of Nitrogen Ion Damage on the Optical and Electrical Properties of MBE GaN Grown on MOCVD GaN/sapphire Templates
Alexander P. Young, Leonard J. Brillson, Yoshiki Naoi, Charles W. Tu.
W11.57. Dynamics of Anomalous Temperature-Induced Emission Shift in MOCVD-grown (Al, In)GaN Thin Films
Yong-Hoon Cho, Gordon H. Gainer, Jack B. Lam, Jin Joo Song, W. Yang, Wonho Jhe.
W11.58. Time-Resolved Spectroscopy of InGaN
Milan Pophristic, Frederick H Long, C. Tran, I. T. Ferguson.
W11.62. Photoluminescence Enhancement and Morphological Properties of Carbon Co-Doped GaN:Er
Mark Eddy Overberg, C. R. Abernathy, S. J. Pearton, R. G. Wilson, J. M. Zavada.
W11.64. Photoluminescence and Cathodoluminescence of GaN Doped With Pr
Henryk J. Lozykowski, Wojciech Jadwisienczak, I. Brown.
W11.65. Comparison of the Optical Properties of Er3+ Doped Gallium Nitride Prepared by Metalorganic Molecular Beam Epitaxy (MOMBE) and Solid Source Molecular Beam Epitaxy (SSMBE)
Uwe H Hommerich, J. T. Seo, J. D. MacKenzie, C. R. Abernathy, R. Birkhahn, A. J. Steckl, J. M. Zavada.
W11.66. High Density Plasma Damage Induced in n-GaN Schottky Diodes Using Cl2/Ar Discharges
Anping Zhang, Gerard Dang, F. Ren, X.A. CAo, H. Cho, E.S. Lambers, S.J. Pearton, R.J. Shul, L. Zhang, A.G. Baca, R. Hickman, J.M. Van Hove.
W11.67. Processing And Device Performance Of GaN Power Rectifiers
A.P. Zhang, G.T. Dang, X.A. Cao, H. Cho, F. Ren, J. Han, J.-I. Chyi, C.-M. Lee, T.-E. Nee, G.-C. Chi, C.-C. Chuo, S.N.G. Chu, R.G. Wilson, S. J. Pearton.
W11.68. Comparison of Implant Isolation Species for GaN Field-Effect Transistor Structure
Gerard Dang, Xian An Cao, Fan Ren, Stephen J. Pearton, J. Han, A. G. Baca, R. J. Shul, R. G. Wilson.
W11.69. Development of Wide Bandgap Semiconductor Photonic Device Structures by Excimer Laser Micromachining
Qiang Zhao, M. Lukitsch, J. Xu, G. Auner, R. Niak, P-K. Kuo.
W11.70. Wet Etching of Ion-Implanted GaN Crystals by AZ-400K Photoresist
Carmine A Carosella, Bela Molnar, Stefanie Schiestel, James A Sprague.
W11.71. Oxidation of Gallium Nitride Epilayers in Dry Oxygen
P. Chen, Rong Zhang, X. F. Xu, Pen Chen, Y. G. Zhou, S. Y. Xie, Y. Shi, B. Shen, S. L. Gu, Z. C. Huang, J. Hu, Y. D. Zheng.
W11.73. A Damage-Reduced Process Revealed by Photoluminescence in Photoelectrochemical Etching GaN
Jung-Min Hwang, J. T. Hsieh, Huey-Liang Hwang, Wei-Hsu Hung.
W11.74. Fabrication and Characterization of InGaN Nano-Scale Dots for Blue and Green LED Applications
Chang-Hee Hong, Ki Soo Kim, Won-Hee Lee, Chi Sun Kim, Ok Hwan Cha, Gye Mo Yang, Eun-Kyung Suh, Kee Young Lim, Hyung Jae Lee, Hyung Koun Cho, Jeong Yong Lee, Jae Myung Seo.
W11.75. The Microstructure and Electrical Properties of Directly Deposited TiN Ohmic Contacts to Gallium Nitride
Pierre Ruterana, Gerard Nouet Nouet, Thomas Kehagias, Philomela Komninou, Theodoros Karakostas, Marie Antoinette di Forte Poisson, Frederik Huet.
W11.76. Highly Chemical Reactive Ion Etching of Gallium Nitride
Fouad Karouta, Bart Jacobs, Ingrid Moerman, Koen Jacobs, Jan Weyher, Sylvester Porowski, Rachel Crane, Paul Hageman.
W11.77. Improved Low Resistance Contacts of Ni/Au and Pd/Au to p-Type GaN Using a Cryogenic Treatment
Mi-Ran Park, Wayne A Anderson, Seong-Ju Park.
W11.78. A Thermodynamic Approach to Ohmic Contact Formation to p-GaN
Bo Liu, Mikko H. Ahonen, Paul H. Holloway.
W11.79. Metal/GaN Contacts Studied by Electron Spectroscopies
Jacques Dumont, Roland Caudano, Robert Sporken, Eva Monroy, Elias Munoz, Bernard Beaumont, Pierre Gibart.
W11.80. Deep Levels in n-Type Schottky and p+-n Homojunction GaN Diodes
Adrian Hierro, D. Kwon, S. A. Ringel, M. Hansen, U. K. Mishra, S. P. DenBaars, J. S. Speck.
W11.81. Deep Centers and Persistent Photoconductivity Studies in Variously Grown GaN Films
Alexander Y. Polyakov, Nikolai B. Smirnov, Anatoliy V. Govorkov, Alexander S. Usikov, Natalie M. Shmidt, Boris V. Pushnyi, Denis V. Tsvetkov, Sergey I. Stepanov, Vladimir A. Dmitriev, Mikhail G. Mil'vidskii, Vladimir F. Pavlov.
W11.82. Fermi Level Pinning at GaN-Interfaces: Correlation of Electrical Admittance and Transient Spectroscopy
Hartmut P. Witte, Andre Andre, Marko Lisker, Dirk Rudloff, Juergen Christen, Alois Krost, Martin Stutzmann, F. Scholz.
W11.84. Characteristics of Deep Centers Observed in n-GaN Grown by Reactive Molecular Beam Epitaxy
Zhaoqiang Fang, David C Look, Wook Kim, Hadis Morkoc.
W12.3. Focused Ion Beam Etching of Nanometer-Size GaN/AlGaN Device Structures and Their Optical Characterization by Micro-Photoluminescence/Raman Mapping
Martin Kuball, M. Benyoucef, F. H. Morrissey, C. T. Foxon.
W12.4. Spectroscopy in Polarized and Piezoelectric AlGaInN Heterostructures
Christian M Wetzel, Tetsuya Takeuchi, Hiroshi Amano, Isamu Akasaki.
W12.6. Influence of Internal Electric Fields on the Ground Level Emission of GaN/AlGaN Multi-Quantum Wells
Annalisa Bonfiglio, Mauro Lomascolo, Giampiero Traetta, Roberto Cingolani, Aldo Di Carlo, Fabio Della Sala, Paolo Lugli, Andrei Botchkarev, Hadis Morkoc.
W12.7. Comparison Study of Structural and Optical Properties of InxGa1-xN/GaN Quantum Wells With Different In Compositions
Yong-Hwan Kwon, G. H. Gainer, S. Bidnyk, Y. H. Cho, J. J. Song, M. Hansen, S. P. DenBaars.
W12.8. Emission at 247 nm from GaN Quantum Wells Grown by MOCVD
Takao Someya, Katsuyuki Hoshino, Janet C. Harris, Koichi Tachibana, Satoshi Kako, Yasuhiko Arakawa.
W12.9. Identification of As, Ge and Se Photoluminescence in GaN Using Radioactive Isotopes
Arno Stötzler, Ralf Weissenborn, Manfred Deicher.
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