Figures

Figure 1

Schematic of AlGaN p-i-n photodiode structure.

Figure 2

Cathodoluminescence spectra for n-type AlGaN:Si layers grown under different conditions.

Figure 3

Cathodoluminesce spectra for three AlGaN:Mg layers having different dopant levels.

Figure 4

Optical transmittance through (a) AlGaN n-type base layer, (b) entire solar-blind heterostructure photodiode.

Figure 5

Spectral responsivity spectrum for solar-blind AlGaN heterostructure photodiode. Responsivity peak occurs at 273 nm with a FWHM = 21 nm.

Figure 6

Electrical characteristics of solar-blind AlGaN heterostructure photodiode.

Figure 7

Detectivity versus wavelength for selected photodetectors.

© 2000 The Materials Research Society