Atomic fraction of Mg in GaN as a function of the Mg flux ratio in the gas phase, using Solution Cp2Mg or (MeCp)2Mg as as dopant sources. The slope gives the dopant incorporation efficiency.
Dependence of the Mg flux ratio on the growth rate G. G was measured by reflectometry.
Growth rate as a function of Mg concentration, measured by SIMS. We find a unique linear relationship, regardless of the Mg precursor used.