Influence of the Mg precursor on the incorporation of Mg in MOVPE grown GaN.
P. de Mierry, B. Beaumont, E. Feltin, H.P.D. Schenk, Pierre GIBART
Centre de Recherche sur l'Hétéroépitaxie et ses Applications, CRHEA-CNRS
F. Jomard
Laboratoire de Physique des Solides de Bellevue, LPSB-CNRS
S. Rushworth, L. Smith, R. Odedra
Epichem Limited
This article was received on Friday, May 26, 2000 and
accepted on Saturday, July 22, 2000. Abstract
Incorporation
of Mg in metalorganic vapour phase epitaxy (MOVPE) GaN has been investigated,
using two different Mg precursors: bis-methylcyclopentadienyl magnesium
[(MeCp)2Mg] and Solution bis-cyclopentadienyl magnesium [Solution
Cp2Mg]. SIMS analysis reveals an increased (two fold) efficiency of
Mg incorporation for Solution
Cp2Mg as compared to (MeCp)2Mg. These results are
attributed to the stronger interaction of (MeCp)2Mg with
NH3, leading to the formation of alkylmagnesium amine adducts, and a
reduced effective Mg surface concentration. A
decreased GaN growth rate with increasing Mg fluxes is also reported
for both precursors. This effect is more pronounced for Solution
Cp2Mg indicating that incorporation of Mg in the lattice proceeds
via the capture of Mg into group
III sites, and that the supply of Mg from the surface is reduced in the case
when (MeCp)2Mg is used. Outline
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5, 8(2000).
last updated Sunday, July 23, 2000 4:35:23 PM.© 2000 The Materials Research Society
