Figures

Figure 1

AFM images of sapphire surface (a) before etching, and (b) after etching in hot H2SO4: H3PO4 at 300 °C for 20 minutes.

Figure 2

AFM images after annealing of sapphire for 30 minutes at (a) 1100°C; (b) 1200 °C; (c) 1300 °C; and (d) 1380 °C, respectively.

Figure 3

AFM images after annealing of sapphire for 1 hours at (a) 1000 °C; (b) 1300 °C; (c) 1380 °C; and for 3 hours at 1380 °C (d).

Figure 4

AFM image of sapphire annealed at 1380 °C for 1 hour showing terrace-like features with about 0.2 micrometer long terraces.

© 2000 The Materials Research Society